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| PM4575J Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features * * * * * * * * Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc. PM4575J Outline LF-J D1 S2 S1/D2 G2 S2 S1 G1 Equivalent Circuit D1 G1 S1 S1/D2 G2 S2 No S1 D1 S2 D2 G1 S1 G2 S2 Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2 Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110 Remarks Power terminal S2 Signal terminals Absolute Maximum Ratings (Ta = 25C) (Per FET chip) Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes: 1. Value at Ta = 25C 2. Base to terminals AC minute Symbol V(BR)DSS V(BR)GSS ID I D(peak) I DR I DR(peak) Pch* Tch Tstg Viso* 2 1 Rating 450 30 75 180 75 180 300 150 -45 to +125 2000 Unit V V A A A A W C C Vrms 2 PM4575J Electrical Characteristics (Ta = 25C) (Per FET chip) Item Drain to source breakdown voltage Gate to source leak current Gate to source breakdown voltage Drain leak current Gate to source threshold voltage Drain to source saturation voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Symbol V(BR)DSS I GSS V(BR)GSS I DSS VGS(th) VDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 450 -- 30 -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.7 0.10 45 9600 2300 330 100 310 550 135 1.8 130 Max -- 10 -- 500 3.0 4.44 0.12 -- -- -- -- -- -- -- -- -- -- V ns I F = 75 A, VGS = 0 V I F = 75 A, VGS = 0 V di/dt = 100 A/ms ns I D = 37 A, VGS = 10 V Rg = 50 RL = 1 Unit V A V A V V S pF Test conditions I D = 10 mA, VGS = 0 V VGS = 25 V, VDS = 0 V I G = 100 A, VDS = 0 V VDS = 360 V, VGS = 0 V I D = 1 mA, VDS = 10 V I D = 37 A, VGS = 10 V*1 I D = 37 A, VGS = 10 V*1 I D = 37 A, VDS = 10 V*1 VDS = 10 V, VGS = 0 V f = 1 MHz Mechanical Characteristics Item Fixing strength Symbol -- -- Weight -- Condition Mounting into main-terminal with M4 screw Mounting into heat sink with M5 screw Typical value Rating 1.45 to 1.95 1.95 to 2.9 200 Unit N-m N-m g 3 PM4575J Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1000 100 10 1 0.1 Ta = 25C 10 s 10 0 1 P ms s DC W = (T O 10 ap m = er 25 at s C ion ) Maximum Safe Operation Area 200 Drain Current I D (A) 100 n ni tio a is a er re y Op is a d b ) h ite (on t lim DS R PM5075J PM4575J 0 50 100 150 0.01 0.1 1 10 100 1000 Case Temperature T C (C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 VGS = 10 V Drain Current I D (A) 80 VGS = 6 V 60 40 20 VGS = 5 V VGS = 4.5 V VGS = 4 V 0 4 8 12 16 20 0 100 Typical Transfer Characteristics VDS = 10 V Pulse Test Pulse Test Drain Current I D (A) 80 60 40 20 Ta = 75C Ta = 25C Ta = -25C 4 6 8 10 2 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 4 PM4575J Static Drain to Source Resistance RDS (on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 6 4 2 ID = 37 A ID = 20 A ID = 75 A Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.3 V GS = 10, 15 V 0.1 Drain to Source Saturation Voltage VDS (V) 0.03 0 2 4 6 8 10 0.01 1 3 10 30 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 0.5 Static Drain to Source on State Resistance RDS (on) ( ) Forward Admittance | yfs | (S) 0.4 0.3 0.2 0.1 0 -40 100 Forward Transfer Admittance vs. Drain Current Ta = -25C VDS = 10 V Pulse Test 10 75C 1 25C VGS = 10 V Pulse Test I D = 37 A I D = 75 A I D = 20 A 0 40 80 120 0.1 0.1 Case Temperature Tc (C) 1 10 Drain Current I D (A) 100 5 PM4575J Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time t rr (ns) di/dt = 100A/ s, VGS = 0 V Pulse Test 100000 Ciss Coss 1000 Crss 100 VGS = 0 V f = 1 MHz 10 1 10 100 0 10 20 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 100 30 10 0.1 Capacitance C (pF) 300 10000 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) 400 VDS 300 200 100 VDD = 300 V 200 V 100 V VDD = 300 V 200 V 100 V 20 Gate to Source Voltage VGS (V) 16 12 8 4 1000 Switching Time t (ns) Switching Characteristics t d (off) tr tf 100 t d (on) VGS = 10 V duty < 1% VGS 40 80 120 I D = 37 A Pulse Test 160 0 200 10 0.1 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) 6 PM4575J Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test 80 60 VGS = 0, -5 V 40 20 VGS = 10 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance (t) Normalized Transient Thermal Impedance vs. Pulse Width D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1s h p ot uls e 1 ch - C (t) = (t) * ch - C ch - C = 0.385C/W, TC = 25C PDM 0.01 PW T D= PW T 10 0.001 100 1m 10 m Pulse Width PW (s) 100 m 1 7 PM4575J Switching Time Test Circuit Vin Monitor D.U.T RL P.G. Vin 10 V 50 VDD .. 30 V = Vout Monitor Waveforms 90 % 10 % Vin Vout 90 % 90 % 10 % t f (on) tr t d (off) 10 % tf 8 PM4575J Package Dimensions Unit: mm (7) 2- 5.5 0.3 80 0.6 (23) (23) 3-M5 Screw G2 S2 JAPAN S1 D2 S2 D1 S1 G1 (12) 95 Max (19) (7) (16) (7) (19) (2.8) 31 Max (19) (27) 35 Max (24) 9 PM4575J When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 10 |
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